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APT50GP60J
| Manufacturer | |
| Description | Trans IGBT Chip N-CH 600V 100A 4-Pin SOT-227 IGBT 600V 100A 329W SOT227 IGBT Modules Insulated Gate Bipolar Transistor - PT Power MOS 7 - Single |
| Category |
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Business
| Product | IGBT Silicon Modules | Standard Package | Rail / Tube |
Compliance
| RoHS | Lead free / RoHS Compliant | ||
Electrical
| Input | Standard | IGBT Type | PT |
| Vgs (Max) | ±20 V | Power - Max | 329W |
| NTC Thermistor | No | Voltage - Supply | 600V |
| Vce Saturation (Max) | 2.2 V | Voltage - Input (Min) | 600 V |
| Power - Average Forward | 329 W | Vce(on) (Max) @ Vge, Ic | 2.7V @ 15V, 50A |
| Gate Charge (Qg) (Max) @ Vgs | +/- 100 nA | Current - Collector (Ic) (Max) | 100A |
| Input Capacitance (Cies) @ Vce | 5.7nF @ 25V | Current - Collector Cutoff (Max) | 100 A |
| Current - Continuous Drain (Id) @ 25degC | 100 A | ||
Mechanical
| Mounting Type | Screw | Mounting Style | SMD/SMT |
| Package / Case | 4SOT-227 | Supplier Device Package | ISOTOP® |
Product Info
| Manufacturer | Microsemi | Configuration | Single Dual Emitter |
Environmental
| Operating Temperature | - 55 C | ||