APT200GT60JR
| Manufacturer | |
| Description | Trans IGBT Chip N-CH 600V 195A 4-Pin SOT-227 IGBT 600V 195A ISOTOP IGBT Modules Insulated Gate Bipolar Transistor - NPT Med Frequency - Single |
| Category |
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Business
| Product | IGBT Silicon Carbide Modules | Standard Package | Rail / Tube |
Compliance
| RoHS | Lead free / RoHS Compliant | ||
Electrical
| Input | Standard | IGBT Type | NPT |
| Vgs (Max) | ±30 V | Power - Max | 500W |
| NTC Thermistor | No | Voltage - Supply | 600V |
| Vce Saturation (Max) | 2 V | Voltage - Input (Min) | 600 V |
| Power - Average Forward | 500 W | Vce(on) (Max) @ Vge, Ic | 2.5V @ 15V, 200A |
| Gate Charge (Qg) (Max) @ Vgs | 300 nA | Current - Collector (Ic) (Max) | 195A |
| Input Capacitance (Cies) @ Vce | 8.65nF @ 25V | Current - Collector Cutoff (Max) | 195 A |
| Current - Continuous Drain (Id) @ 25degC | 195 A | ||
Mechanical
| Mounting Type | Screw | Mounting Style | SMD/SMT |
| Package / Case | 4SOT-227 | Supplier Device Package | SOT-227 |
Product Info
| Manufacturer | Microsemi | Configuration | Single Dual Emitter |
Environmental
| Operating Temperature | - 55 C | ||