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MUBW35-12A7 product image

MUBW35-12A7

Manufacturer
Description
Discrete Semiconductor Modules 35 Amps 1200V Trans IGBT Module N-CH 1.2KV 50A 24-Pin MODULE IGBT CBI E2
Category
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Business

ProductPower Semiconductor ModulesStandard Package6
Factory Pack Quantity6

Compliance

RoHSLead free / RoHS CompliantEU RoHSCompliant
Rad HardenedNo

Electrical

InputThree Phase Bridge RectifierIGBT TypeNPT
Vgs (Max)�20 VPower - Max225W
NTC ThermistorYesVoltage - Supply1200V
Voltage - Input (Min)1200Power Dissipation (Max)225000
Vce(on) (Max) @ Vge, Ic3.1V @ 15V, 35ACurrent - Collector (Ic) (Max)50A
Input Capacitance (Cies) @ Vce1.65nF @ 25VCurrent - Collector Cutoff (Max)1.1mA
Voltage - Gate Trigger (Vgt) (Max)1.6 kV

Mechanical

Width45PackagingBulk
Mounting TypeScrewMounting StyleScrew
Package / CaseE2Length - Overall107.5
Number of Positions24Shell Size - Insert17
Supplier Device PackageE2

Product Info

TypeConverter/Brake/Inv (CBI) IGBT ModulesSeriesMUBW35
Channel TypeNConfigurationHex
Printed Circuit Board24

Environmental

Operating TemperatureAutomotiveOperating Temperature - Junction125C

Documents & Media

PDF Document