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MUBW15-12A6K

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MUBW15-12A6K

Manufacturer
Description
Discrete Semiconductor Modules 15 Amps 1200V Trans IGBT Module N-CH 1.2KV 19A 25-Pin MODULE IGBT CBI E1 MUBW15-12A6K, IGBT Module, N-channel, Hex, 19A 1200V, 25-Pin IXYS N通道 IGBT 模块, 3 相桥接, 19 A 1200 V, 25针
Category
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Business

ProductPower Semiconductor ModulesStandard Package10
Factory Pack Quantity10

Compliance

RoHSLead free / RoHS CompliantEU RoHSCompliant

Electrical

InputThree Phase Bridge RectifierIGBT TypeNPT
Vgs (Max)±20VDelay Time50 ns
Power - Max90WNTC ThermistorYes
Transistor Type3 相Current - Output89 A
Voltage - Supply1200VVoltage - Input (Min)1200 V
Power Dissipation (Max)90000Vce(on) (Max) @ Vge, Ic3.4V @ 15V, 15A
Current - Collector (Ic) (Max)19AInput Capacitance (Cies) @ Vce0.6nF @ 25V
Current - Collector Cutoff (Max)600µAVoltage - Gate Trigger (Vgt) (Max)1600 V

Mechanical

Width37.4mmHeight17.1mm
Length82mmPackagingBulk
Mounting TypeScrewMounting StyleScrew
Number of Pins25Package / CaseE1
Length - Overall82Size / Dimension82 x 37.4 x 17.1mm
Number of Positions25Shell Size - Insert17.1
Supplier Device PackageE1

Product Info

TypeConverter/Brake/Inv (CBI) IGBT ModulesSeriesMUBW15
Channel TypeNManufacturerIXYS
ConfigurationHexChannels per IC3 相桥接
Printed Circuit Board25

Environmental

Operating Temperature+125 °C

Documents & Media

PDF Document
PDF Document