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MKE11R600DCGFC
| Manufacturer | |
| Description | Power Driver ICs CoolMOS Power Mosfet 600V 15A DIODE GEN PURP 600V 15A I4-PAC Gate Drivers CoolMOS Power Mosfet 600V 15A MOSFET N-CH 600V 15A I4-PAC MOSFET CoolMOS Power Mosfet 600V 15A |
| Category |
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Business
| Tradename | COOLMOS | Standard Package | 25 |
| Factory Pack Quantity | 25 | ||
Compliance
| RoHS | RoHS Compliant | ||
Electrical
| FET Type | MOSFET N-Channel, Metal Oxide | Fall Time | 4 ns |
| Vgs (Max) | 20 V | FET Feature | Standard |
| Gate Charge | 40 nC | Rise Time (Typ) | 6 ns |
| Transistor Type | N-Channel | Delay to 1st Tap | 75 ns |
| Number of Channels | 1 Channel | Vgs(th) (Max) @ Id | 3.5V @ 790µA |
| Rds On (Max) @ Id, Vgs | 165 mOhm @ 12A, 10V | Vce(on) (Max) @ Vge, Ic | 600 V |
| On-State Resistance (Max) | 165 mOhns | Gate Charge (Qg) (Max) @ Vgs | 52nC @ 10V |
| Switch Time (Ton, Toff) (Max) | 12 ns | Drain to Source Voltage (Vdss) | 600V |
| Input Capacitance (Ciss) (Max) @ Vds | 2000pF @ 100V | Current - Continuous Drain (Id) @ 25degC | 15A |
Mechanical
| Weight | 0.229281 oz | Packaging | Tube |
| Mounting Type | * | Mounting Style | Through Hole |
| Package / Case | * | Supplier Device Package | * |
Product Info
| Series | MKE11R600DCG | Technology | SiC |
| Manufacturer | IXYS | Configuration | Single |