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IXTN600N04T2

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IXTN600N04T2

Manufacturer
Description
Trans MOSFET N-CH 40V 600A 4-Pin SOT-227B MOSFET N-CH 40V 600A SOT-227 Gate Drivers GigaMOS Trench T2 HiperFET PWR MOSFET Discrete Semiconductor Modules GigaMOS Trench T2 HiperFET PWR MOSFET
Category
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Business

ProductMOSFET Gate DriversTradenameTrenchT2 GigaMOS
Standard Package10Factory Pack Quantity10
Standard Package NameSOT-227

Compliance

RoHSLead free / RoHS CompliantEU RoHSCompliant

Electrical

FET TypeMOSFET N-Channel, Metal OxideFall Time250 ns
Vgs (Max)3.5V @ 250µAFET FeatureStandard
Power - Max940WVoltage Rating40 V
Delay Time - ON40 nsRise Time (Typ)20 ns
Current - Output600 ADelay Time - OFF90 ns
Number of Outputs1Number of Elements1
Vgs(th) (Max) @ Id3.5V @ 250µAVoltage - Breakdown40
Rds On (Max) @ Id, Vgs1.05 mOhm @ 100A, 10VPower - Average Forward940 W
Power Dissipation (Max)940 WOn-State Resistance (Max)1.3@10V
Gate Charge (Qg) (Max) @ Vgs590nC @ 10VDrain to Source Voltage (Vdss)40V
Current - Peak Pulse (10/1000us)600Input Capacitance (Ciss) (Max) @ Vds40000pF @ 25V
Current - Continuous Drain (Id) @ 25degC600A

Mechanical

Width25.42(Max)PackagingTube
Lead StyleScrewMounting TypeScrew
Mounting StyleSMD/SMTPackage / CaseSOT-227-4, miniBLOC
Length - Overall38.23(Max)Package QuantitySOT-227B
Number of Positions4Supplier Device PackageSOT-227B

Product Info

TypeTrenchT2 GigaMOSSeriesTrenchT2™ GigaMOS™
Channel TypeEnhancementManufacturerIXYS
Number of DriversSinglePrinted Circuit Board4

Environmental

Operating Temperature- 55 C

Documents & Media

PDF Document