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IXTN210P10T
| Manufacturer | |
| Description | MOSFET P-CH 100V 210A SOT-227 MOSFET TrenchP Channel Power MOSFETs Discrete Semiconductor Modules TrenchP Channel Power MOSFETs |
| Category |
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Business
| Tradename | TrenchP | Standard Package | 10 |
| Factory Pack Quantity | 10 | ||
Compliance
| RoHS | RoHS Compliant | ||
Electrical
| FET Type | MOSFET P-Channel, Metal Oxide | Fall Time | 55 ns |
| FET Feature | Standard | Gate Charge | 740 nC |
| Power - Max | 830W | Power - Rated | 830 W |
| Rise Time (Typ) | 98 ns | Transistor Type | P-Channel |
| Delay to 1st Tap | 165 ns | Vgs(th) (Max) @ Id | 4.5V @ 250µA |
| Rds On (Max) @ Id, Vgs | 7.5 mOhm @ 105A, 10V | Vce(on) (Max) @ Vge, Ic | - 100 V |
| Current Transfer Ratio (Min) | 90 s | Gate Charge (Qg) (Max) @ Vgs | 740nC @ 10V |
| Drain to Source Voltage (Vdss) | 100V | Voltage - Gate Trigger (Vgt) (Max) | +/- 15 V |
| Current - Drain (Idss) @ Vds (Vgs=0) | - 210 A | Input Capacitance (Ciss) (Max) @ Vds | 69500pF @ 25V |
| Current - Continuous Drain (Id) @ 25degC | 210A | ||
Mechanical
| Packaging | Tube | Mounting Type | Chassis Mount |
| Mounting Style | SMD/SMT | Package / Case | SOT-227-4, miniBLOC |
| Supplier Device Package | SOT-227 | ||
Product Info
| Type | TrenchP Power MOSFET | Series | IXTN210P10 |
| Manufacturer | IXYS | ||
Environmental
| Operating Temperature | - 55 C | ||