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IXTK22N100L

Manufacturer	Littelfuse, Inc.
Description	MOSFET N-CHAN 1000V 22A Trans MOSFET N-CH 1KV 22A 3-Pin(3+Tab) TO-264 MOSFET N-CH 1000V 22A TO-264 IXTK22N100L, N-channel MOSFET Transistor 22A 1000V, 3-Pin TO-264 PowerMOSFETN-Ch1000V22ATO-264 MOSFET N, 1000 V 22 A 700 W TO-264, IXTK22N100L, Ixys IXYS Linear 系列 N沟道 Si MOSFET , 22 A, Vds=1000 V, 3针 TO-264封装
Category	Discrete Semiconductor ComponentsDiscrete SemiconductorsDIACs - Trigger Diodes

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Product Category	MOSFET	Standard Package	25
Factory Pack Quantity	25

RoHS

Lead free / RoHS Compliant

EU RoHS

Compliant

FET Type	MOSFET N-Channel, Metal Oxide	Fall Time	50 ns
Vgs (Max)	±30 V	FET Feature	Standard
Gate Charge	270 nC	Power - Max	700W
Power - Rated	700 W	Delay Time - ON	36 ns
Output Function	增强	Rise Time (Typ)	35 ns
Transistor Type	N-Channel	Delay Time - OFF	80 ns
Delay to 1st Tap	80 ns	Voltage - Supply	1000 V
Number of Channels	1 Channel	Number of Elements	1
Resistance - Input	0.6 Ω	Vgs(th) (Max) @ Id	5V @ 250µA
Voltage - Breakdown	1000 V	Rds On (Max) @ Id, Vgs	600 mOhm @ 11A, 20V
Power - Average Forward	700 W	Power Dissipation (Max)	700 W
Vce(on) (Max) @ Vge, Ic	1 kV	On-State Resistance (Max)	0.6 Ω
Reverse Recovery Time (trr)	1000 nstyp	Current Transfer Ratio (Min)	4.5 s
Gate Charge (Qg) (Max) @ Vgs	270nC @ 15V	Switch Time (Ton, Toff) (Max)	36 ns
Drain to Source Voltage (Vdss)	1000V (1kV)	Current - Peak Pulse (10/1000us)	22 A
Resistance - Post Trip (R1) (Max)	0.6 Ohm	Voltage - Gate Trigger (Vgt) (Max)	+/- 30 V
Current - Drain (Idss) @ Vds (Vgs=0)	22 A	Input Capacitance (Ciss) (Max) @ Vds	7050pF @ 25V
Current - Continuous Drain (Id) @ 25degC	22A (Tc)

Operating Temperature

+150 °C

PDF Document

PDF Document