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IXFX320N17T2
| Manufacturer | |
| Description | Power Driver ICs GigaMOS Trench T2 HiperFET PWR MOSFET MOSFET N-CH 170V 320A PLUS247 Gate Drivers GigaMOS Trench T2 HiperFET PWR MOSFET |
| Category |
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Business
| Product | MOSFET Gate Drivers | Tradename | TrenchT2 GigaMOS |
| Standard Package | 30 | Factory Pack Quantity | 30 |
Compliance
| RoHS | RoHS Compliant | ||
Electrical
| FET Type | MOSFET N-Channel, Metal Oxide | Fall Time | 230 ns |
| FET Feature | Standard | Power - Max | 1670W |
| Voltage Rating | 170 V | Delay Time - ON | 46 ns |
| Rise Time (Typ) | 170 ns | Current - Output | 100 A |
| Current - Supply | 100 A | Delay Time - OFF | 115 ns |
| Number of Outputs | 1 | Vgs(th) (Max) @ Id | 5V @ 8mA |
| Rds On (Max) @ Id, Vgs | 5.2 mOhm @ 60A, 10V | Power - Average Forward | 1670 W |
| Power Dissipation (Max) | 1670 W | Gate Charge (Qg) (Max) @ Vgs | 640nC @ 10V |
| Drain to Source Voltage (Vdss) | 170V | Input Capacitance (Ciss) (Max) @ Vds | 45000pF @ 25V |
| Current - Continuous Drain (Id) @ 25degC | 320A (Tc) | ||
Mechanical
| Packaging | Tube | Mounting Type | Through Hole |
| Mounting Style | Through Hole | Package / Case | PLUS-247 |
| Supplier Device Package | PLUS247™-3 | ||
Product Info
| Type | GigaMOS Trench T2 HiperFet | Series | IXFX320N17 |
| Manufacturer | IXYS | Number of Drivers | Single |
Environmental
| Operating Temperature | + 175 C | ||
Documents & Media
PDF Document
PDF Document