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IXFN80N50P

Manufacturer	Littelfuse, Inc.
Description	MOSFET 500V 80A Trans MOSFET N-CH 500V 66A 4-Pin SOT-227B MOSFET N-CH 500V 66A SOT-227 IXFN80N50P, N-channel MOSFET Transistor & Diode 66A 500V, 4-Pin SOT-227B IXYS , N沟道 MOSFET, 66 A, Vds=500 V, 4针 SOT-227B封装
Category	Discrete Semiconductor ComponentsDiscrete SemiconductorsDIACs - Trigger Diodes

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Business

RoHS

Lead free / RoHS Compliant

EU RoHS

Compliant

FET Type	MOSFET N-Channel, Metal Oxide	Fall Time	18 ns
Vgs (Max)	±30 V	FET Feature	Standard
Power - Max	700W	Power - Rated	700 W
Delay Time - ON	25 ns	Output Function	增强
Rise Time (Typ)	27 ns	Transistor Type	N-Channel
Delay Time - OFF	70 ns	Delay to 1st Tap	70 ns
Voltage - Supply	500 V	Number of Channels	1 Channel
Number of Elements	1	Resistance - Input	65 mΩ
Vgs(th) (Max) @ Id	5V @ 8mA	Voltage - Breakdown	500 V
Rds On (Max) @ Id, Vgs	65 mOhm @ 500mA, 10V	Power - Average Forward	700 W
Power Dissipation (Max)	700 W	Vce(on) (Max) @ Vge, Ic	500 V
On-State Resistance (Max)	0.065 Ω	Current Transfer Ratio (Min)	70 s
Gate Charge (Qg) (Max) @ Vgs	195nC @ 10V	Switch Time (Ton, Toff) (Max)	25 ns
Drain to Source Voltage (Vdss)	500V	Current - Peak Pulse (10/1000us)	66 A
Voltage - Gate Trigger (Vgt) (Max)	+/- 30 V	Current - Drain (Idss) @ Vds (Vgs=0)	66 A
Input Capacitance (Ciss) (Max) @ Vds	12700pF @ 25V	Current - Continuous Drain (Id) @ 25degC	66A

Operating Temperature

+150 °C

PDF Document

PDF Document