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IXFK360N15T2

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IXFK360N15T2

Manufacturer
Description
Power Driver ICs GigaMOS Trench T2 HiperFET PWR MOSFET Trans MOSFET N-CH 150V 360A 3-Pin(3+Tab) TO-264 MOSFET N-CH 150V 360A TO264 Gate Drivers GigaMOS Trench T2 HiperFET PWR MOSFET
Category
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Business

ProductMOSFET Gate DriversTradenameTrenchT2 GigaMOS
Standard Package25Factory Pack Quantity25

Compliance

RoHSRoHS CompliantEU RoHSCompliant

Electrical

FET TypeMOSFET N-Channel, Metal OxideFall Time265 ns
Vgs (Max)±20FET FeatureStandard
Power - Max1670WVoltage Rating150 V
Delay Time - ON50 nsRise Time (Typ)170 ns
Current - Output100 ACurrent - Supply100 A
Delay Time - OFF115 nsNumber of Outputs1
Number of Elements1Vgs(th) (Max) @ Id5V @ 8mA
Voltage - Breakdown150Rds On (Max) @ Id, Vgs4 mOhm @ 60A, 10V
Power - Average Forward1670 WPower Dissipation (Max)1670 W
On-State Resistance (Max)4@10VGate Charge (Qg) (Max) @ Vgs715nC @ 10V
Drain to Source Voltage (Vdss)150VCurrent - Peak Pulse (10/1000us)360
Input Capacitance (Ciss) (Max) @ Vds47500pF @ 25VCurrent - Continuous Drain (Id) @ 25degC360A (Tc)

Mechanical

Width5.13(Max)PackagingTube
Tab WidthTabMounting TypeThrough Hole
Mounting StyleThrough HolePackage / CaseTO-264
Length - Overall19.96(Max)Package QuantityTO-264
Number of Positions3Shell Size - Insert26.16(Max)
Supplier Device PackageTO-264

Product Info

TypeGigaMOS Trench T2 HiperFetSeriesIXFK360N15
Channel TypeEnhancementManufacturerIXYS
Number of DriversSinglePrinted Circuit Board3

Environmental

Operating Temperature+ 175 C

Documents & Media

PDF Document