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IXFH14N60P

Manufacturer	Littelfuse, Inc.
Description	MOSFET 600V 14A Trans MOSFET N-CH 600V 14A 3-Pin(3+Tab) TO-247 MOSFET N-CH 600V 14A TO-247 IXFH14N60P, N-channel MOSFET Transistor & Diode 14A 600V, 3-Pin TO-247 IXYS HiperFET HiperFET, Polar Polar 系列 N沟道 Si MOSFET , 14 A, Vds=600 V, 3针 TO-247封装
Category	Discrete Semiconductor ComponentsDiscrete SemiconductorsDIACs - Trigger Diodes

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RoHS

Lead free / RoHS Compliant

EU RoHS

Compliant

FET Type	MOSFET N-Channel, Metal Oxide	Fall Time	26 ns
Vgs (Max)	±30 V	FET Feature	Standard
Power - Max	300W	Power - Rated	300 W
Delay Time - ON	23 ns	Output Function	增强
Rise Time (Typ)	27 ns	Transistor Type	N-Channel
Delay Time - OFF	70 ns	Delay to 1st Tap	70 ns
Voltage - Supply	600 V	Number of Channels	1 Channel
Number of Elements	1	Resistance - Input	550 mΩ
Vgs(th) (Max) @ Id	5.5V @ 2.5mA	Voltage - Breakdown	600 V
Rds On (Max) @ Id, Vgs	550 mOhm @ 7A, 10V	Power - Average Forward	300 W
Power Dissipation (Max)	300 W	Vce(on) (Max) @ Vge, Ic	600 V
On-State Resistance (Max)	0.55 Ω	Current Transfer Ratio (Min)	13 s
Gate Charge (Qg) (Max) @ Vgs	36nC @ 10V	Switch Time (Ton, Toff) (Max)	23 ns
Drain to Source Voltage (Vdss)	600V	Current - Peak Pulse (10/1000us)	14 A
Voltage - Gate Trigger (Vgt) (Max)	+/- 30 V	Current - Drain (Idss) @ Vds (Vgs=0)	14 A
Input Capacitance (Ciss) (Max) @ Vds	2500pF @ 25V	Current - Continuous Drain (Id) @ 25degC	14A (Tc)

Operating Temperature

+150 °C

PDF Document

PDF Document