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IPP072N10N3 G

Manufacturer	Infineon Technologies AG
Description	MOSFET N-KANAL POWER MOS MOSFET N-CH 100V 80A TO220-3 MOSFET N-Channel 100V 80A OptiMOS3 TO220 Infineon , N沟道 MOSFET, 80 A, Vds=100 V, 3针 TO-220封装 MOSFET N-Ch 100V 80A TO220-3 OptiMOS 3
Category	Discrete Semiconductor ComponentsDiscrete SemiconductorsDIACs - Trigger Diodes

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RoHS

Compliant

FET Type	MOSFET N-Channel, Metal Oxide	Fall Time	9 ns
Vgs (Max)	±20 V	FET Feature	Standard
Gate Charge	68 nC	Power - Max	150W
Power - Rated	150 W	Delay Time - ON	19 ns
Output Function	增强	Rise Time (Typ)	37 ns
Transistor Type	N-Channel	Delay Time - OFF	37 ns
Delay to 1st Tap	37 ns	Voltage - Supply	100 V
Number of Channels	1 Channel	Number of Elements	1
Resistance - Input	7.2 mΩ	Vgs(th) (Max) @ Id	3.5V @ 90µA
Voltage - Breakdown	100 V	Rds On (Max) @ Id, Vgs	7.2 mOhm @ 80A, 10V
Power - Average Forward	150 W	Power Dissipation (Max)	150 W
Vce(on) (Max) @ Vge, Ic	100 V	On-State Resistance (Max)	7.2 mΩ
Current Transfer Ratio (Min)	50 S	Gate Charge (Qg) (Max) @ Vgs	68nC @ 10V
Switch Time (Ton, Toff) (Max)	19 ns	Drain to Source Voltage (Vdss)	100V
Current - Peak Pulse (10/1000us)	80 A	Voltage - Gate Trigger (Vgt) (Max)	+/- 20 V
Current - Drain (Idss) @ Vds (Vgs=0)	80 A	Input Capacitance (Ciss) (Max) @ Vds	4910pF @ 50V
Current - Continuous Drain (Id) @ 25degC	80A (Tc)

Series	IPP072N10	Function	Y
Technology	Si	Channel Type	Enhancement
Manufacturer	Infineon Technologies	Card Standard	High Frequency Switching, Synchronous Rectification
Configuration	Single

Operating Temperature

+175 °C