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IPP041N04N G

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IPP041N04N G

Manufacturer
Description
MOSFET OptiMOS 3 Power TRANSITOR 40V 80A N-CH 40V 80A 4mOhm TO220-3 MOSFET N-CH 40V 80A TO220-3 MOSFET, N CH, 80A, 40V, PG-TO220-3 Infineon , N沟道 MOSFET, 80 A, Vds=40 V, 3针 TO-220封装 MOSFET N-Ch 40V 80A TO220-3 OptiMOS 3
Category
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Business

MOQ500TradenameOptiMOS
Unit Pack500Part # AliasesIPP041N04NGHKSA1 IPP041N04NGXKSA1 SP000680790
Product CategoryMOSFETStandard Package500
Factory Pack Quantity500

Compliance

RoHSRoHS CompliantTariff No85412900
AutomotiveNOLeadfree DefinRoHS-conform

Electrical

FET TypeMOSFET N-Channel, Metal OxideFall Time4.8 ns
Vgs (Max):10VLogic TypeNO
FET FeatureStandardPower - Max94W
Power - Rated94 WRise Time (Typ)3.8 ns
Transistor TypeN-ChannelDelay to 1st Tap23 ns
Vgs(th) (Max) @ Id4V @ 45µAVoltage - Threshold:2V
Current Rating (Max):80AResistance - RDS(On):3.3mohm
Rds On (Max) @ Id, Vgs0.0041 OhmsPower Dissipation (Max):94W
Vce(on) (Max) @ Vge, Ic40 VPower (Watts) - Per Port94W
Voltage - Supply (Vcc/Vdd)40VGate Charge (Qg) (Max) @ Vgs42nC
Drain to Source Voltage (Vdss)40VVoltage - Gate Trigger (Vgt) (Max)+/- 20 V
Current - Drain (Idss) @ Vds (Vgs=0)80 AInput Capacitance (Ciss) (Max) @ Vds4500pF @ 20V
Current - Continuous Drain (Id) @ 25degC80A (Tc)

Mechanical

Weight0.002PackagingTube
Mounting TypeTHTMounting StyleThrough Hole
Number of Pins:3Package / CaseTO-220
Material Finish:-Supplier Device PackagePG-TO220-3

Product Info

SeriesIPP041N04MatchcodeIPP041N04N G
ConfigurationSingleStandard Leadtime1 week

Environmental

Operating Temperature+ 175 CThermal Resistance @ GPM1.6K/W