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IPD096N08N3 G

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IPD096N08N3 G

Manufacturer
Description
MOSFET N-Channel MOSFET 20-200V N-CH 80V 73A 10mOhm TO252-3 MOSFET N-CH 80V 73A TO252-3
Category
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Business

MOQ2500TradenameOptiMOS
Unit Pack2500Part # AliasesIPD096N08N3GBTMA1 IPD096N08N3GXT SP000474196
Product CategoryMOSFETStandard Package2,500
Factory Pack Quantity2500

Compliance

RoHSRoHS CompliantAutomotiveNO
Leadfree DefinRoHS-conform

Electrical

FET TypeMOSFET N-Channel, Metal OxideFall Time5 ns
Logic TypeNOFET FeatureStandard
Power - Max100WPower - Rated100 W
Rise Time (Typ)30 nsTransistor TypeN-Channel
Delay to 1st Tap23 nsVgs(th) (Max) @ Id3.5V @ 46µA
Rds On (Max) @ Id, Vgs0.0096 OhmsVce(on) (Max) @ Vge, Ic80 V
Power (Watts) - Per Port100WVoltage - Supply (Vcc/Vdd)80V
Gate Charge (Qg) (Max) @ Vgs35nCDrain to Source Voltage (Vdss)80V
Voltage - Gate Trigger (Vgt) (Max)+/- 20 VCurrent - Drain (Idss) @ Vds (Vgs=0)73 A
Input Capacitance (Ciss) (Max) @ Vds2410pF @ 40VCurrent - Continuous Drain (Id) @ 25degC73A (Tc)

Mechanical

PackagingReelMounting TypeSMD
Mounting StyleSMD/SMTPackage / CaseTO-252
Supplier Device PackagePG-TO252-3

Product Info

SeriesIPD096N08MatchcodeIPD096N08N3 G
TechnologyOptiMOSConfigurationSingle
Standard Leadtime14 weeks

Environmental

Operating Temperature+ 175 CThermal Resistance @ GPM1.5K/W