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IPB080N03L G

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IPB080N03L G

Manufacturer
Description
MOSFET OptiMOS 3 PWR TRANS 30V 50A N-CH 30V 50A 8mOhm TO263-3 MOSFET N-CH 30V 50A TO263-3 MOSFET, N CH, 50A, 30V, PG-TO263-3 MOSFET N-Ch 30V 50A D2PAK-2 OptiMOS 3
Category
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Business

MOQ1000TradenameOptiMOS
Unit Pack1000Other NamesIPB080N03L GCT
Part # AliasesIPB080N03LGATMA1 IPB080N03LGXT SP000304104Product CategoryMOSFET
Standard Package1,000Factory Pack Quantity1000

Compliance

RoHSRoHS CompliantTariff No85412900
AutomotiveNOLeadfree DefinRoHS-conform

Electrical

FET TypeMOSFET N-Channel, Metal OxideFall Time2.8 ns
Vgs (Max):10VLogic TypeYES
FET FeatureLogic Level GatePower - Max47W
Power - Rated47 WRise Time (Typ)3.6 ns
Transistor TypeN-ChannelDelay to 1st Tap18 ns
Vgs(th) (Max) @ Id2.2V @ 250µAVoltage - Threshold:1V
Current Rating (Max):50AResistance - RDS(On):6.7mohm
Rds On (Max) @ Id, Vgs0.008 OhmsPower Dissipation (Max):47W
Vce(on) (Max) @ Vge, Ic30 VPower (Watts) - Per Port47W
Voltage - Supply (Vcc/Vdd)30VGate Charge (Qg) (Max) @ Vgs8.7nC
Drain to Source Voltage (Vdss)30VVoltage - Gate Trigger (Vgt) (Max)+/- 20 V
Current - Drain (Idss) @ Vds (Vgs=0)50 AInput Capacitance (Ciss) (Max) @ Vds1900pF @ 15V
Current - Continuous Drain (Id) @ 25degC50A

Mechanical

Weight0.002PackagingReel
Mounting TypeSMDMounting StyleSMD/SMT
Number of Pins:3Package / CaseTO-263
Material Finish:MSL 1 - UnlimitedSupplier Device PackagePG-TO263-2

Product Info

SeriesIPB080N03MatchcodeIPB080N03L G
ConfigurationSingleStandard Leadtime13 weeks

Environmental

Operating Temperature+ 175 CThermal Resistance @ GPM3.2K/W