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IPB06N03LA G
| Manufacturer | |
| Description | MOSFET N-CH 25V 50A MOSFET N-CH 25V 50A D2PAK |
| Category |
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Business
| Product Category | MOSFET | Standard Package | 1,000 |
| Factory Pack Quantity | 1000 | ||
Compliance
| RoHS | RoHS Compliant | ||
Electrical
| FET Type | MOSFET N-Channel, Metal Oxide | Fall Time | 4.4 ns |
| FET Feature | Logic Level Gate | Power - Max | 83W |
| Power - Rated | 83 W | Rise Time (Typ) | 30 ns |
| Transistor Type | N-Channel | Delay to 1st Tap | 30 ns |
| Vgs(th) (Max) @ Id | 2V @ 40µA | Rds On (Max) @ Id, Vgs | 9.5 mOhms |
| Vce(on) (Max) @ Vge, Ic | 25 V | Current Transfer Ratio (Min) | 58 S / 29 S |
| Gate Charge (Qg) (Max) @ Vgs | 22nC @ 5V | DC Resistance (DCR) - Primary | 58 S / 29 S |
| Drain to Source Voltage (Vdss) | 25V | Voltage - Gate Trigger (Vgt) (Max) | +/- 20 V |
| Current - Drain (Idss) @ Vds (Vgs=0) | 50 A | Input Capacitance (Ciss) (Max) @ Vds | 2653pF @ 15V |
| Current - Continuous Drain (Id) @ 25degC | 50A (Tc) | ||
Mechanical
| Packaging | Reel | Mounting Type | Surface Mount |
| Mounting Style | SMD/SMT | Package / Case | TO-263 |
| Supplier Device Package | PG-TO263-3 | ||
Product Info
| Configuration | Single | ||
Environmental
| Mechanical Life | End of Life: Scheduled for obsolescence and will be discontinued by the manufacturer. | Operating Temperature | + 175 C |