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IPB019N06L3 G
| Manufacturer | |
| Description | MOSFET OptiMOS3 PWRTrnsistr LOGIC LEVEL N-CH N-CH 60V 120A 2mOhm TO263-3 MOSFET N-CH 60V 120A TO263-3 MOSFET N-Ch 60V 120A D2PAK-2 OptiMOS 3 |
| Category |
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Business
| MOQ | 1000 | Tradename | OptiMOS |
| Unit Pack | 1000 | Other Names | IPB019N06L3 GCT |
| Part # Aliases | IPB019N06L3GATMA1 IPB019N06L3GXT SP000453020 | Product Category | MOSFET |
| Standard Package | 1,000 | Factory Pack Quantity | 1000 |
Compliance
| RoHS | RoHS Compliant | Automotive | NO |
| Leadfree Defin | RoHS-conform | ||
Electrical
| FET Type | MOSFET N-Channel, Metal Oxide | Logic Type | YES |
| FET Feature | Logic Level Gate | Power - Max | 250W |
| Power - Rated | 250000 mW | Transistor Type | N-Channel |
| Delay to 1st Tap | 131 ns | Vgs(th) (Max) @ Id | 2.2V @ 196µA |
| Rds On (Max) @ Id, Vgs | 1.9 mOhms | Vce(on) (Max) @ Vge, Ic | 60 V |
| Power (Watts) - Per Port | 250W | Voltage - Supply (Vcc/Vdd) | 60V |
| Gate Charge (Qg) (Max) @ Vgs | 166nC | Drain to Source Voltage (Vdss) | 60V |
| Voltage - Gate Trigger (Vgt) (Max) | +/- 20 V | Current - Drain (Idss) @ Vds (Vgs=0) | 120 A |
| Input Capacitance (Ciss) (Max) @ Vds | 28000pF @ 30V | Current - Continuous Drain (Id) @ 25degC | 120A |
Mechanical
| Packaging | Reel | Mounting Type | SMD |
| Package / Case | TO-263 | Supplier Device Package | PG-TO263-2 |
Product Info
| Series | IPB019N06 | Matchcode | IPB019N06L3 G |
| Technology | OptiMOS 3 | Configuration | Single |
| Standard Leadtime | 14 weeks | ||
Environmental
| Operating Temperature | + 175 C | Thermal Resistance @ GPM | 0.6K/W |