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BUZ31 H

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BUZ31 H

Manufacturer
Description
MOSFET N-Channel 200V Transistor MOSFET N-CH 200V 14.5A TO220-3 MOSFET N-Channel 200V 14.5A TO220
Category
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Business

TradenameOptiMOSPart # AliasesBUZ31HXKSA1 SP000682992
Standard Package500

Compliance

RoHSCompliant

Electrical

FET TypeMOSFET N-Channel, Metal OxideFall Time60 nS
Vgs (Max)±20 VFET FeatureStandard
Power - Max95WPower - Rated95 W
Rise Time (Typ)50 nSTransistor TypeN-Channel
Delay to 1st Tap150 nsNumber of Elements1
Vgs(th) (Max) @ Id4V @ 1mAVoltage - Breakdown200 V
Rds On (Max) @ Id, Vgs200 mOhm @ 9A, 5VPower Dissipation (Max)95 W
Vce(on) (Max) @ Vge, Ic200 VOn-State Resistance (Max)0.2 Ω
Current Transfer Ratio (Min)12 SSwitch Time (Ton, Toff) (Max)12 ns
Drain to Source Voltage (Vdss)200VCurrent - Peak Pulse (10/1000us)14.5 A
Voltage - Gate Trigger (Vgt) (Max)+/- 20 VCurrent - Drain (Idss) @ Vds (Vgs=0)14.5 A
Input Capacitance (Ciss) (Max) @ Vds1120pF @ 25VCurrent - Continuous Drain (Id) @ 25degC14.5A (Tc)

Mechanical

Width4.57mmHeight9.45mm
Length10.36mmPackagingTube
Mounting TypeThrough HoleMounting StyleThrough Hole
Package / CaseTO-220-3Package CooledPG-TO-220-3
Size / Dimension10.36 x 4.57 x 9.45mmNumber of Positions3
Supplier Device PackagePG-TO220-3

Product Info

SeriesBUZ31Channel TypeEnhancement
Card StandardPower MOSFETConfigurationSingle

Environmental

Operating Temperature+150 °C