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BSZ040N04LS G

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BSZ040N04LS G

Manufacturer
Description
MOSFET OptiMOS 3 PWR TRANS 40V 40A N-CH 40V 40A 4.0mOhm S3O8 MOSFET N-CH 40V 40A TSDSON-8 MOSFET N-Channel 40V 18A TSDSON8 Infineon OptiMOS 3 系列 Si N沟道 MOSFET , 40 A, Vds=40 V, 8针 TSDSON封装 MOSFET N-Ch 40V 40A TSDSON-8 OptiMOS 3
Category
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Business

MOQ5000Unit Pack5000
Other NamesBSZ040N04LSGINCTStandard Package5,000

Compliance

RoHSLead free / RoHS CompliantAutomotiveNO
Leadfree DefinRoHS-conform

Electrical

FET TypeMOSFET N-Channel, Metal OxideVgs (Max)±20 V
Logic TypeYESFET FeatureLogic Level Gate
Power - Max69WDelay to 1st Tap33 ns
Number of Elements1Vgs(th) (Max) @ Id2V @ 36µA
Voltage - Breakdown40 VRds On (Max) @ Id, Vgs0.0056Ohm
Power Dissipation (Max)69 WPower (Watts) - Per Port69W
On-State Resistance (Max)5.6 mΩVoltage - Supply (Vcc/Vdd)40V
Gate Charge (Qg) (Max) @ Vgs31nCSwitch Time (Ton, Toff) (Max)8.5 ns
Drain to Source Voltage (Vdss)40VCurrent - Peak Pulse (10/1000us)40 A
Current - Drain (Idss) @ Vds (Vgs=0)40AInput Capacitance (Ciss) (Max) @ Vds5100pF @ 20V
Current - Continuous Drain (Id) @ 25degC18A (Ta), 40A (Tc)

Mechanical

Width3.4mmHeight1.1mm
Length3.4mmPackagingTape & Reel (TR)
Mounting TypeSMDPackage / CaseTSDSON-8
Package CooledPG-TSDSON-8Size / Dimension3.4 x 3.4 x 1.1mm
Number of Positions8Supplier Device PackagePG-TSDSON-8 (3.3x3.3)

Product Info

MatchcodeBSZ040N04LS GTechnologyOptiMOS
Channel TypeEnhancementCard StandardDC/DC Converter, SMPS
ConfigurationQuad Drain, Single Gate, Triple SourceStandard Leadtime22 weeks

Environmental

Operating Temperature+150 °CThermal Resistance @ GPM1.8K/W

Documents & Media

PDF Document