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BSC320N20NS3 G

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BSC320N20NS3 G

Manufacturer
Description
MOSFET N-KANAL POWER MOS MOSFET 200V 32mOhm 36A SSO-8 MOSFET N-CH 200V 36A TDSON-8 MOSFET N-Channel 200V 36A TDSON8 Infineon , N沟道 MOSFET, 36 A, Vds=200 V, 8针 TDSON封装 MOSFET N-Ch 200V 36A TDSON-8 OptiMOS 3
Category
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Business

MOQ1TradenameOptiMOS
Unit Pack5000Other NamesBSC320N20NS3 GCT
Part # AliasesBSC320N20NS3GATMA1 SP000676410Product CategoryMOSFET
Standard Package5,000Factory Pack Quantity5000

Compliance

RoHSLead free / RoHS CompliantAutomotiveNO
Leadfree DefinRoHS-conform

Electrical

FET TypeMOSFET N-Channel, Metal OxideFall Time4 ns
Vgs (Max)±20 VLogic TypeNO
FET FeatureLogic Level GateGate Charge22 nC
Power - Max125WPower - Rated125 W
Rise Time (Typ)9 nsTransistor TypeN-Channel
Delay to 1st Tap22 nsNumber of Elements1
Vgs(th) (Max) @ Id4V @ 90µAVoltage - Breakdown200 V
Rds On (Max) @ Id, Vgsn.s.OhmPower Dissipation (Max)125 W
Vce(on) (Max) @ Vge, Ic200 VPower (Watts) - Per Port125W
On-State Resistance (Max)32 mΩVoltage - Supply (Vcc/Vdd)200V
Current Transfer Ratio (Min)58 S, 29 SGate Charge (Qg) (Max) @ Vgs22nC
Switch Time (Ton, Toff) (Max)14 nsDrain to Source Voltage (Vdss)200V
Current - Peak Pulse (10/1000us)36 AVoltage - Gate Trigger (Vgt) (Max)20 V
Current - Drain (Idss) @ Vds (Vgs=0)36AInput Capacitance (Ciss) (Max) @ Vds2350pF @ 100V
Current - Continuous Drain (Id) @ 25degC36A (Tc)

Mechanical

Width6.1mmHeight1.1mm
Length5.35mmPackagingTape & Reel (TR)
Mounting TypeSMDMounting StyleSMD/SMT
Package / CaseTDSON-8Package CooledPG-TDSON-8
Size / Dimension5.35 x 6.1 x 1.1mmNumber of Positions8
Supplier Device PackagePG-TDSON-8 (5.15x6.15)

Product Info

SeriesBSC320N20MatchcodeBSC320N20NS3 G
TechnologyOptiMOSChannel TypeEnhancement
Card StandardHigh Frequency Switching, Synchronous RectificationConfigurationQuad Drain, Single Gate, Triple Source
Standard Leadtime21 weeks

Environmental

Operating Temperature+150 °CThermal Resistance @ GPM1K/W