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BSC011N03LSIXT
| Manufacturer | |
| Description | MOSFET OptiMOS Power MOSFET MOSFET N-Ch 30V 100A TSDSON-8 OptiMOS |
| Category |
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Business
| Tradename | OptiMOS | Part # Aliases | BSC011N03LSIATMA1 SP000884574 |
| Factory Pack Quantity | 5000 | ||
Compliance
| RoHS | RoHS Compliant | ||
Electrical
| Fall Time | 6.2 ns | Vgs (Max) | 20 V |
| Gate Charge | 72 nC | Power - Rated | 96 W |
| Rise Time (Typ) | 8.8 ns | Transistor Type | N-Channel |
| Delay to 1st Tap | 37 ns | Number of Channels | 1 Channel |
| Vgs(th) (Max) @ Id | 1.2 V | Rds On (Max) @ Id, Vgs | 1.1 mOhms |
| Power - Average Forward | 96 W | Vce(on) (Max) @ Vge, Ic | 30 V |
| On-State Resistance (Max) | 900 uOhms | Current Transfer Ratio (Min) | 80 S |
| Switch Time (Ton, Toff) (Max) | 6.4 ns | Voltage - Gate Trigger (Vgt) (Max) | +/- 20 V |
| Current - Drain (Idss) @ Vds (Vgs=0) | 100 A | Current - Continuous Drain (Id) @ 25degC | 100 A |
Mechanical
| Width | 5.15 mm | Height | 1.27 mm |
| Length | 5.9 mm | Packaging | Reel |
| Mounting Style | SMD/SMT | Package / Case | PG-TSDSON-8 |
Product Info
| Series | BSC011N03 | Technology | Si |
| Channel Type | Enhancement | Manufacturer | Infineon Technologies |
| Configuration | Single Quad Drain Triple Source | ||
Environmental
| Operating Temperature | - 55 C | ||