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BSC011N03LS

Manufacturer	Infineon Technologies AG
Description	Trans MOSFET N-CH 30V 37A 8-Pin TDSON EP MOSFET N-CH 30V 100A 8TDSON MOSFET N-CH 30V 100A Infineon , N沟道 MOSFET, 100 A, Vds=30 V, 8针 TDSON封装 MOSFET N-Ch 30V 100A TDSON-8 OptiMOS
Category	Discrete Semiconductor ComponentsIGBTsDiscrete IGBTs

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RoHS

Lead free / RoHS Compliant

FET Type	MOSFET N-Channel, Metal Oxide	Fall Time	6.2 ns
Vgs (Max)	20 V	FET Feature	Logic Level Gate
Gate Charge	72 nC	Power - Max	96W
Power - Rated	2.5 W	Delay Time - ON	6.7 ns
Fall Time (Typ)	6.2 ns	Output Function	增强
Rise Time (Typ)	8.8 ns	Transistor Type	N-Channel
Delay Time - OFF	37 ns	Delay to 1st Tap	37 ns
Voltage - Supply	1V	Number of Channels	1 Channel
Number of Elements	1	Resistance - Input	0.0014 Ω
Vgs(th) (Max) @ Id	2.2V @ 250µA	Voltage - Breakdown	30 V
Rds On (Max) @ Id, Vgs	1.1@10V mOhm	Power - Average Forward	96 W
Power Dissipation (Max)	96 W	Propagation Delay (Max)	8.8 ns
Vce(on) (Max) @ Vge, Ic	30 V	On-State Resistance (Max)	900 uOhms
Current Transfer Ratio (Min)	170 S	Gate Charge (Qg) (Max) @ Vgs	72nC @ 10V
Switch Time (Ton, Toff) (Max)	6.7 ns	Drain to Source Voltage (Vdss)	30V
Current - Peak Pulse (10/1000us)	37 A	Voltage - Gate Trigger (Vgt) (Max)	+/- 20 V
Current - Drain (Idss) @ Vds (Vgs=0)	100 A	Input Capacitance (Ciss) (Max) @ Vds	4700pF @ 15V
Current - Continuous Drain (Id) @ 25degC	37A (Ta), 100A (Tc)

Series	BSC011N03	Function	Y
Technology	Si	Channel Type	Enhancement
Manufacturer	Infineon Technologies	Card Standard	功率 MOSFET
Configuration	Single Quad Drain Triple Source

Operating Temperature

-55 to 150 °C