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BCR 162 E6327
| Manufacturer | |
| Description | Transistors Switching - Resistor Biased PNP Silicon Digital TRANSISTOR TRANS PREBIAS PNP 200MW SOT23-3 Bipolar Transistors - Pre-Biased PNP Silicon Digital TRANSISTOR |
| Category |
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Business
| Part # Aliases | BCR162E6327HTSA1 BCR162E6327XT SP000010785 | Product Category | Transistors Switching - Resistor Biased |
| Standard Package | 3,000 | Factory Pack Quantity | 3000 |
Compliance
| RoHS | RoHS Compliant | ||
Electrical
| Power - Max | 200mW | Transistor Type | PNP |
| Voltage - Supply | 50 V | Resistor - Base (R1) | 4.7 KOhms |
| Frequency - Transition | 200MHz | Resistor Matching Ratio | 1 |
| Resistor - Emitter Base (R2) | 4.7k | Vce Saturation (Max) @ Ib, Ic | 300mV @ 500µA, 10mA |
| Current - Collector (Ic) (Max) | 100mA | Current - Collector Cutoff (Max) | 100nA (ICBO) |
| Current - Collector Pulsed (Icm) | 100 mA | DC Current Gain (hFE) (Min) @ Ic, Vce | 20 |
Mechanical
| Width | 1.3 mm | Height | 1 mm |
| Length | 2.9 mm | Packaging | Reel |
| Mounting Type | Surface Mount | Mounting Style | SMD/SMT |
| Package / Case | SOT-23-3 | Supplier Device Package | PG-SOT23-3 |
Product Info
| Series | BCR162 | Manufacturer | Infineon Technologies |
| Configuration | Single | ||
Environmental
| Operating Temperature | + 150 C | ||

