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IRFR3518PBF
| Manufacturer | |
| Description | MOSFET N-CH 80V 38A DPAK Infineon , N沟道 MOSFET, 38 A, Vds=80 V, 3针 DPAK封装 MOSFET 80V 1 N-CH HEXFET 29mOhms 37nC |
| Category |
Business
| Factory Pack Quantity | 6000 | ||
Compliance
| RoHS | RoHS Compliant | ||
Electrical
| Fall Time | 13 ns | Vgs (Max) | 20 V |
| Gate Charge | 37 nC | Delay Time - ON | 12 ns |
| Output Function | 增强 | Rise Time (Typ) | 25 ns |
| Transistor Type | Si | Delay Time - OFF | 37 ns |
| Delay to 1st Tap | 37 ns | Voltage - Supply | 80 V |
| Number of Channels | 1 Channel | Number of Elements | 1 |
| Resistance - Input | 29 mΩ | Vgs(th) (Max) @ Id | 4V |
| Power - Average Forward | 110 W | Power Dissipation (Max) | 110 W |
| Vce(on) (Max) @ Vge, Ic | 80 V | On-State Resistance (Max) | 24 mOhms |
| Current Transfer Ratio (Min) | 34 S | Gate Charge (Qg) (Max) @ Vgs | ±20 V |
| Switch Time (Ton, Toff) (Max) | 12 ns | Input Capacitance (Ciss) (Max) @ Vds | 1710 pF@ 25 V |
| Current - Continuous Drain (Id) @ 25degC | 38 A | ||
Mechanical
| Width | 6.22mm | Height | 2.39mm |
| Length | 6.73mm | Packaging | Tube |
| Mounting Type | 表面贴装 | Mounting Style | SMD/SMT |
| Number of Pins | 3 | Package / Case | TO-252-3 |
| Package Quantity | DPAK | Size / Dimension | 6.73 x 6.22 x 2.39mm |
Product Info
| Type | HEXFET Power MOSFET | Function | Y |
| Technology | Si | Channel Type | N |
| Manufacturer | Infineon Technologies | Card Standard | 功率 MOSFET |
| Configuration | Single | ||
Environmental
| Operating Temperature | +175 °C | ||
Documents & Media
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