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IRF8721PBF
| Manufacturer | |
| Description | MOSFET N-CH 30V 14A 8-SOIC Infineon , N沟道 MOSFET, 14 A, Vds=30 V, 8针 SOIC封装 MOSFET 30V 1 N-CH HEXFET 8.5mOhms 8.3nC |
| Category |
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Business
| Factory Pack Quantity | 3800 | ||
Compliance
| RoHS | RoHS Compliant | ||
Electrical
| Vgs (Max) | 20 V | Gate Charge | 8.3 nC |
| Delay Time - ON | 8.2 ns | Output Function | 增强 |
| Transistor Type | Si | Delay Time - OFF | 8.1 ns |
| Voltage - Supply | 30 V | Number of Channels | 1 Channel |
| Number of Elements | 1 | Resistance - Input | 9 mΩ |
| Vgs(th) (Max) @ Id | 2.35V | Power - Average Forward | 2.5 W |
| Power Dissipation (Max) | 2.5 W | Vce(on) (Max) @ Vge, Ic | 30 V |
| On-State Resistance (Max) | 12.5 mOhms | Gate Charge (Qg) (Max) @ Vgs | ±20 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1040 pF@ 15 V | Current - Continuous Drain (Id) @ 25degC | 14 A |
Mechanical
| Width | 4mm | Height | 1.5mm |
| Length | 5mm | Packaging | Tube |
| Mounting Type | 表面贴装 | Mounting Style | SMD/SMT |
| Number of Pins | 8 | Package / Case | SO-8 |
| Package Quantity | SOIC | Size / Dimension | 5 x 4 x 1.5mm |
Product Info
| Function | Y | Technology | Si |
| Channel Type | N | Manufacturer | Infineon Technologies |
| Card Standard | 功率 MOSFET | Configuration | Single Quad Drain Triple Source |
Environmental
| Operating Temperature | +150 °C | ||
