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IRF7425PBF
| Manufacturer | |
| Description | MOSFET P-CH 20V 15A 8-SOIC Infineon , P沟道 MOSFET, 15 A, Vds=20 V, 8针 SOIC封装 MOSFET 20V 1 N-CH HEXFET 8.2mOhms 87nC |
| Category |
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Business
| Factory Pack Quantity | 3800 | ||
Compliance
| RoHS | RoHS Compliant | ||
Electrical
| Fall Time | 160 ns | Vgs (Max) | 12 V |
| Gate Charge | 87 nC | Delay Time - ON | 13 ns |
| Output Function | 增强 | Rise Time (Typ) | 20 ns |
| Transistor Type | Si | Delay Time - OFF | 230 ns |
| Delay to 1st Tap | 230 ns | Voltage - Supply | 20 V |
| Number of Channels | 1 Channel | Number of Elements | 1 |
| Resistance - Input | 8 mΩ | Vgs(th) (Max) @ Id | 1.2V |
| Power - Average Forward | 2.5 W | Power Dissipation (Max) | 2500 mW |
| Vce(on) (Max) @ Vge, Ic | - 20 V | On-State Resistance (Max) | 8.2 mOhms |
| Gate Charge (Qg) (Max) @ Vgs | ±12 V | Switch Time (Ton, Toff) (Max) | 13 ns |
| Input Capacitance (Ciss) (Max) @ Vds | 7980 pF@ 15 V | Current - Continuous Drain (Id) @ 25degC | 15 A |
Mechanical
| Width | 4mm | Height | 1.5mm |
| Length | 5mm | Packaging | Tube |
| Mounting Type | 表面贴装 | Mounting Style | SMD/SMT |
| Number of Pins | 8 | Package / Case | SO-8 |
| Package Quantity | SOIC | Size / Dimension | 5 x 4 x 1.5mm |
Product Info
| Type | HEXFET Power MOSFET | Function | Y |
| Technology | Si | Channel Type | P |
| Manufacturer | Infineon Technologies | Card Standard | 功率 MOSFET |
| Configuration | Single Quad Drain Triple Source | ||
Environmental
| Operating Temperature | +150 °C | ||
Documents & Media
PDF Document
PDF Document
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