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IRF7343QPBF

Manufacturer	Infineon Technologies AG
Description	Trans MOSFET N/P-CH 55V 4.7A/3.4A 8-Pin SOIC IRF7343QPBF, Dual N/P-channel MOSFET Transistor 55V, 8-Pin SOIC -20VFETKY-MOSFETANDSCHOTTKYDIODEINASO-8PACKAGE Transistor: N/P-MOSFET x2; unipolar; HEXFET; 55V; 4.7A; 2W; SO8
Category	Integrated CircuitsLogic ICsStandard Logic ICs

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Standard Package

Rail / Tube

RoHS

Compliant

Vgs (Max)	±20 V	Gate Charge	24 (N)/26 (P)nC
Power - Rated	2W	Delay Time - ON	8.3/14ns
Fall Time (Typ)	13@N Channel\|22@P Channel ns	Transistor Type	HEXFET
Delay Time - OFF	32/43ns	Delay to 1st Tap	32@N Channel\|43@P Channel ns
Voltage - Supply	0.7/-0.8V	Number of Elements	2
Voltage - Breakdown	55 V	Rds On (Max) @ Id, Vgs	50@10V@N Channel\|105@10V@P Channel mOhm
Power Dissipation (Max)	2 W	Propagation Delay (Max)	3.2@N Channel\|10@P Channel ns
Vce(on) (Max) @ Vge, Ic	55/-55V	On-State Resistance (Max)	0.05 (N-Channel) Ω, 0.105 (P-Channel) Ω
Current Transfer Ratio (Max)	7.9/3.3S	Gate Charge (Qg) (Max) @ Vgs	24 nC @ 10 V (N-Channel), 26 nC @ 10 V (P-Channel)
Switch Time (Ton, Toff) (Max)	8.3@N Channel\|14@P Channel ns	Current - Peak Pulse (10/1000us)	4.7@N Channel\|3.4@P Channel A
Current - Drain (Idss) @ Vds (Vgs=0)	4.7/-3.4A	Input Capacitance (Ciss) (Max) @ Vds	690 pF @ 25 V (P-Channel), 740 pF @ 25 V (N-Channel)

Thermal Resistance	62.5K/W	Operating Temperature	-55 to 150 °C
Thermal Resistance @ Natural	62.5°C/W

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