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GA10SICP12-263

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GA10SICP12-263

Manufacturer
Description
TRANS SJT 1200V 25A TO263-7 MOSFET 1200V 25A Std SIC CoPak
Category
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Business

Factory Pack Quantity50

Compliance

RoHSRoHS Compliant

Electrical

Vgs (Max)30 VGate Charge55 nC
Transistor TypeN-ChannelNumber of Channels1 Channel
Power - Average Forward170 WVce(on) (Max) @ Vge, Ic1200 V
On-State Resistance (Max)100 mOhmsCurrent - Continuous Drain (Id) @ 25degC25 A

Mechanical

Width9.169 mmHeight4.597 mm
Length10.668 mmPackagingReel
Mounting StyleSMD/SMTPackage / CaseTO-263-7

Product Info

TypeTransistor/Schottky Diode Co-PackTechnologySiC
Channel TypeEnhancementManufacturerGeneSiC Semiconductor
ConfigurationSingle

Environmental

Operating Temperature+ 175 C