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GA100JT17-227
| Manufacturer | |
| Description | TRANS SJT 1700V 160A SOT227 MOSFET 1700V 160A SiC Junction Transistor |
| Category |
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Business
| Factory Pack Quantity | 10 | ||
Compliance
| RoHS | RoHS Compliant | ||
Electrical
| Fall Time | 120 ns | Vgs (Max) | 30 V |
| Gate Charge | 478 nC | Rise Time (Typ) | 100 ns |
| Transistor Type | N-Channel | Delay to 1st Tap | 160 ns |
| Number of Channels | 1 Channel | Power - Average Forward | 535 W |
| Vce(on) (Max) @ Vge, Ic | 1700 V | On-State Resistance (Max) | 21 mOhms |
| Switch Time (Ton, Toff) (Max) | 50 ns | Current - Continuous Drain (Id) @ 25degC | 160 A |
Mechanical
| Packaging | Tube | Mounting Style | Chassis Mount |
| Package / Case | SOT-227-4 | ||
Product Info
| Technology | SiC | Manufacturer | GeneSiC Semiconductor |
| Configuration | Single | ||
Environmental
| Operating Temperature | + 175 C | ||