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GA05JT03-46
| Manufacturer | |
| Description | TRANS SJT 300V 9A MOSFET SiC High Temperature JT |
| Category |
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Business
| Factory Pack Quantity | 50 | ||
Compliance
| RoHS | RoHS Compliant | ||
Electrical
| Fall Time | 12.4 ns | Vgs (Max) | 30 V |
| Gate Charge | 14.6 nC | Rise Time (Typ) | 6.6 ns |
| Transistor Type | N-Channel | Delay to 1st Tap | 12 ns |
| Number of Channels | 1 Channel | Power - Average Forward | 20 W |
| Vce(on) (Max) @ Vge, Ic | 300 V | On-State Resistance (Max) | 620 mOhms |
| Current - Continuous Drain (Id) @ 25degC | 9 A | ||
Mechanical
| Packaging | Bulk | Mounting Style | Through Hole |
| Package / Case | TO-46-3 | ||
Product Info
| Technology | SiC | Channel Type | Enhancement |
| Manufacturer | GeneSiC Semiconductor | Configuration | Single |
Environmental
| Operating Temperature | + 225 C | ||