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GA03JT12-247

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GA03JT12-247

Manufacturer
Description
TRANS SJT 1200V 3A TO-247AB MOSFET SiC Super Junc Trans 1200V-Rds 550mO-3A JFET SiC Super Junc Trans 1200V-Rds 550mO-3A
Category
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Business

Standard Package30Factory Pack Quantity30

Compliance

RoHSRoHS Compliant

Electrical

FET TypeSilicon Carbide, Normally OffFET FeatureSuper Junction
Power - Max91WPower - Rated5 W
Transistor TypeN-ChannelRds On (Max) @ Id, Vgs460 mOhm @ 3A
Power - Average Forward5 WVce(on) (Max) @ Vge, Ic1200 V
On-State Resistance (Max)470 mOhmsDrain to Source Voltage (Vdss)1200V (1.2kV)
Current - Drain (Idss) @ Vds (Vgs=0)3 ACurrent - Continuous Drain (Id) @ 25degC3A (Tc) (95°C)

Mechanical

PackagingTubeMounting TypeThrough Hole
Mounting StyleThrough HolePackage / CaseTO-247-3
Supplier Device PackageTO-247AB

Product Info

SeriesGA03TechnologySiC
ManufacturerGeneSiC SemiconductorConfigurationSingle

Environmental

Operating Temperature- 55 C