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2N7636-GA

Manufacturer	GeneSiC Semiconductor, Inc.
Description	TRANS SJT 650V 4A TO-257 TRANS SJT 650V 4A TO276 Transistors Bipolar - BJT SiC High Temp SJT 650V 4A 225 Degree C Bipolar Transistors - BJT SiC High Temp SJT 650V 4A 225 Degree C
Category	Discrete Semiconductor ComponentsBipolar TransistorsBipolar Transistors - General

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Business

Other Names	1242-1147	Standard Package	2
Factory Pack Quantity	10

RoHS

FET Type	Silicon Carbide, Normally Off	FET Feature	Super Junction
Power - Max	7W	Rds On (Max) @ Id, Vgs	415 mOhm @ 4A
Drain to Source Voltage (Vdss)	650V	Input Capacitance (Ciss) (Max) @ Vds	324pF @ 35V
Current - Continuous Drain (Id) @ 25degC	4A (Tc) (165°C)

Packaging	Tube	Mounting Type	Surface Mount
Package / Case	TO-276AA	Supplier Device Package	TO-276

Series

2N76

Manufacturer

GeneSiC Semiconductor