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2N7635-GA
| Manufacturer | |
| Description | TRANS SJT 650V 4A TO-257 Transistors Bipolar - BJT SiC High Temp SJT 650V 4A 225 Degree C SIC JUNCTION TRANS, 650V, 7NA, TO-257-3 Bipolar Transistors - BJT SiC High Temp SJT 650V 4A 225 Degree C |
| Category |
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Business
| Other Names | 1242-1146 | Standard Package | 2 |
Compliance
| RoHS | No | Tariff No | 85412900 |
Electrical
| FET Type | Silicon Carbide, Normally Off | FET Feature | Super Junction |
| Power - Max | 7W | Transistor Type | :JFET |
| Rds On (Max) @ Id, Vgs | 415 mOhm @ 4A | Power Dissipation (Max) | :7W |
| Drain to Source Voltage (Vdss) | 650V | Input Capacitance (Ciss) (Max) @ Vds | 324pF @ 35V |
| Current - Continuous Drain (Id) @ 25degC | 4A (Tc) (165°C) | ||
Mechanical
| Weight | 0 | Packaging | Bulk |
| Mounting Type | Through Hole | Number of Pins | :3 |
| Package / Case | TO-257-3 | Supplier Device Package | TO-257 |
Product Info
| Series | 2N76 | ||
Environmental
| Operating Temperature | :250° | ||