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VTB6061H
| Manufacturer | |
| Description | SILICON PHOTODIODES |
| Category |
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Electrical
| Response | ±55 ° | Resistance | 0.1 Gigaohms |
| Capacitance | 8 nF | Sensitivity | 0.1 A/W |
| Spectral Range | 320 to 1100 nm | Voltage - Breakdown | 40 V |
| Voltage - Open Circuit | 490 mV | Current - Dark (Id) (Max) | 2 pA |
| Current - Short Circuit (Isc) | 350 μA | ||
Mechanical
| Package Cooled | TO-8 | Primary Material | Photo |
Product Info
| Active Area | 0.058 sq.in. | ||
Environmental
| Operating Temperature | -40 to +110 °C | ||