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EPC8010ENGR

Manufacturer	Efficient Power Conversion Corporation
Description	TRANS GAN 100V BUMPED DIE TRANS GAN 100V 3.4A BUMPED DIE
Category	Discrete Semiconductor ComponentsBipolar TransistorsBipolar Transistors - General

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Business

Other Names

917-EPC8010ENGR

Standard Package

RoHS

Lead free / RoHS Compliant

FET Type	GaNFET N-Channel, Gallium Nitride	FET Feature	Logic Level Gate
Vgs(th) (Max) @ Id	2.5V @ 250µA	Rds On (Max) @ Id, Vgs	160 mOhm @ 500mA, 5V
Gate Charge (Qg) (Max) @ Vgs	0.354nC @ 50V	Drain to Source Voltage (Vdss)	100V
Input Capacitance (Ciss) (Max) @ Vds	47pF @ 50V	Current - Continuous Drain (Id) @ 25degC	3.4A (Ta)

Packaging	*	Mounting Type	*
Supplier Device Package	*

Series