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EPC8009ENGR
| Manufacturer | |
| Description | TRAN GAN 65V 4.1A BUMPED DIE |
| Category |
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Business
| Other Names | 917-EPC8009ENGR | Standard Package | 10 |
Compliance
| RoHS | Lead free / RoHS Compliant | ||
Electrical
| FET Type | GaNFET N-Channel, Gallium Nitride | FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 700mV @ 250µA | Rds On (Max) @ Id, Vgs | 138 mOhm @ 500mA, 5V |
| Gate Charge (Qg) (Max) @ Vgs | 0.380nC @ 32.5V | Drain to Source Voltage (Vdss) | 65V |
| Input Capacitance (Ciss) (Max) @ Vds | 47pF @ 32.5V | Current - Continuous Drain (Id) @ 25degC | 4.1A (Ta) |
Mechanical
| Packaging | Bulk | Mounting Type | * |
| Package / Case | Die | Supplier Device Package | Die |
