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EPC8003ENGR

Manufacturer	Efficient Power Conversion Corporation
Description	TRAN GAN 100V 2.5A BUMPED DIE
Category	Discrete Semiconductor ComponentsBipolar TransistorsBipolar Transistors - General

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Business

Other Names

917-EPC8003ENGR

Standard Package

RoHS

Lead free / RoHS Compliant

FET Type	GaNFET N-Channel, Gallium Nitride	FET Feature	Logic Level Gate
Vgs(th) (Max) @ Id	750mV @ 250µA	Rds On (Max) @ Id, Vgs	300 mOhm @ 500mA, 5V
Gate Charge (Qg) (Max) @ Vgs	0.315nC @ 50V	Drain to Source Voltage (Vdss)	100V
Input Capacitance (Ciss) (Max) @ Vds	38pF @ 50V	Current - Continuous Drain (Id) @ 25degC	2.5A (Ta)

Packaging	Bulk	Mounting Type	*
Package / Case	Die	Supplier Device Package	Die