EPC2207

Manufacturer	Efficient Power Conversion Corporation
Description	TRANS GAN 200V DIE .022OHM
Category	Discrete Semiconductor ComponentsIGBTsDiscrete IGBTs

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Compliance

Part Status

Active

Qualification

FET Type	N-Channel	Vgs (Max)	+6V, -4V
FET Feature	-	Vgs(th) (Max) @ Id	2.5V @ 2mA
Rds On (Max) @ Id, Vgs	22mOhm @ 14A, 5V	Power Dissipation (Max)	-
Gate Charge (Qg) (Max) @ Vgs	5.9 nC @ 5 V	Drain to Source Voltage (Vdss)	200 V
Input Capacitance (Ciss) (Max) @ Vds	600 pF @ 100 V	Drive Voltage (Max Rds On, Min Rds On)	5V
Current - Continuous Drain (Id) @ 25degC	14A (Ta)

Packaging	Tape & Reel (TR)	Mounting Type	Surface Mount
Package / Case	Die	Supplier Device Package	Die

Mfr	EPC	Grade	-
Technology	GaNFET (Gallium Nitride)	cms-filter-header-series	-

Operating Temperature

-40°C ~ 150°C (TJ)

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