EPC2065

Manufacturer	Efficient Power Conversion Corporation
Description	GAN FET 80V .0036OHM 8BUMP DIE
Category	Discrete Semiconductor ComponentsIGBTsDiscrete IGBTs

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Compliance

Part Status

Active

Qualification

FET Type	N-Channel	Vgs (Max)	+6V, -4V
FET Feature	-	Vgs(th) (Max) @ Id	2.5V @ 7mA
Rds On (Max) @ Id, Vgs	3.6mOhm @ 25A, 5V	Power Dissipation (Max)	-
Gate Charge (Qg) (Max) @ Vgs	12.2 nC @ 5 V	Drain to Source Voltage (Vdss)	80 V
Input Capacitance (Ciss) (Max) @ Vds	1449 pF @ 40 V	Drive Voltage (Max Rds On, Min Rds On)	5V
Current - Continuous Drain (Id) @ 25degC	60A (Ta)