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EPC2022ENG
| Manufacturer | |
| Description | TRANS GAN 100V 3MO BUMPED DIE |
| Category |
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Business
| Other Names | 917-EPC2022ENG | Standard Package | 10 |
Electrical
| FET Type | GaNFET N-Channel, Gallium Nitride | FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 2.5V @ 12mA | Rds On (Max) @ Id, Vgs | 3.2 mOhm @ 25A, 5V |
| Drain to Source Voltage (Vdss) | 100V | Input Capacitance (Ciss) (Max) @ Vds | 1500pF @ 50V |
| Current - Continuous Drain (Id) @ 25degC | 60A (Ta) | ||
Mechanical
| Packaging | Tray | Mounting Type | Surface Mount |
| Package / Case | Die | Supplier Device Package | Die |
