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EPC2019ENG
| Manufacturer | |
| Description | TRANS GAN 200V 45MO BUMPED DIE |
| Category |
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Business
| Other Names | 917-1055-2 | Standard Package | 500 |
Compliance
| RoHS | Lead free / RoHS Compliant | ||
Electrical
| FET Type | GaNFET N-Channel, Gallium Nitride | FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 2.5V @ 1.5mA | Rds On (Max) @ Id, Vgs | 43 mOhm @ 7A, 5V |
| Drain to Source Voltage (Vdss) | 200V | Input Capacitance (Ciss) (Max) @ Vds | 230pF @ 100V |
| Current - Continuous Drain (Id) @ 25degC | 9A (Ta) | ||
Mechanical
| Packaging | * | Mounting Type | Surface Mount |
| Package / Case | * | Supplier Device Package | * |
