点击放大查看
EPC2018
| Manufacturer | |
| Description | TRANS GAN 150V 12A BUMPED DIE |
| Category |
对参数有疑问？问 AI 助手
Business
| Other Names | 917-1034-2 | Standard Package | 500 |
Compliance
| RoHS | Lead free / RoHS Compliant | ||
Electrical
| FET Type | GaNFET N-Channel, Gallium Nitride | FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 2.5V @ 3mA | Rds On (Max) @ Id, Vgs | 25 mOhm @ 6A, 5V |
| Gate Charge (Qg) (Max) @ Vgs | 7.5nC @ 5V | Drain to Source Voltage (Vdss) | 150V |
| Input Capacitance (Ciss) (Max) @ Vds | 540pF @ 100V | Current - Continuous Drain (Id) @ 25degC | 12A (Ta) |
Mechanical
| Packaging | Tape & Reel (TR) | Mounting Type | Surface Mount |
| Package / Case | Die | Supplier Device Package | Die |
Documents & Media
PDF Document