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EPC2015
| Manufacturer | |
| Description | TRANS GAN 40V 33A BUMPED DIE |
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Business
| Other Names | 917-1019-2 | Standard Package | 500 |
Compliance
| RoHS | Lead free / RoHS Compliant | ||
Electrical
| FET Type | GaNFET N-Channel, Gallium Nitride | FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 2.5V @ 9mA | Rds On (Max) @ Id, Vgs | 4 mOhm @ 33A, 5V |
| Gate Charge (Qg) (Max) @ Vgs | 10.5nC @ 5V | Drain to Source Voltage (Vdss) | 40V |
| Input Capacitance (Ciss) (Max) @ Vds | 1100pF @ 20V | Current - Continuous Drain (Id) @ 25degC | 33A (Ta) |
Mechanical
| Packaging | Tape & Reel (TR) | Mounting Type | Surface Mount |
| Package / Case | Die Outline (11-Solder Bar) | Supplier Device Package | Die Outline (11-Solder Bar) |
Documents & Media
PDF Document
