DI080N06PQ

Manufacturer	Diotec Semiconductor AG
Description	MOSFET POWERQFN 5X6 N 65V
Category	Discrete Semiconductor ComponentsIGBTsDiscrete IGBTs

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Compliance

Part Status

Active

Qualification

FET Type	N-Channel	Vgs (Max)	±20V
FET Feature	-	Vgs(th) (Max) @ Id	3V @ 250µA
Rds On (Max) @ Id, Vgs	3.6mOhm @ 40A, 10V	Power Dissipation (Max)	80W (Tc)
Gate Charge (Qg) (Max) @ Vgs	56 nC @ 10 V	Drain to Source Voltage (Vdss)	65 V
Input Capacitance (Ciss) (Max) @ Vds	3500 pF @ 30 V	Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Current - Continuous Drain (Id) @ 25degC	80A (Tc)

Packaging	Tape & Reel (TR)	Mounting Type	Surface Mount
Package / Case	8-PowerTDFN	Supplier Device Package	8-QFN (5x6)

Mfr	Diotec Semiconductor	Grade	-
Technology	MOSFET (Metal Oxide)	cms-filter-header-series	-

Operating Temperature

-55°C ~ 150°C (TJ)

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