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DMN3070SSN-7

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DMN3070SSN-7

Manufacturer
Description
MOSFET BVDSS: 25V~30V T&R 3K MOSFET N CH 30V 4.2A, SC59 MOSFET 30V N-CH MOSFET
Category
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Business

MOQ3000Unit Pack3000
Other NamesDMN3070SSN-7DITRStandard Package3,000
Factory Pack Quantity3000

Compliance

RoHSContains lead / RoHS Compliant

Electrical

FET TypeMOSFET N-Channel, Metal OxideFall Time4.1 ns
Vgs (Max)20 VFET FeatureLogic Level Gate
Gate Charge13.2 nCPower - Max780mW
Rise Time (Typ)20.1 nsTransistor TypeN-Channel
Delay to 1st Tap4.4 nsNumber of Channels1 Channel
Vgs(th) (Max) @ Id2.1V @ 250µARds On (Max) @ Id, Vgs40 mOhm @ 4.2A, 10V
Power - Average Forward780 mWVce(on) (Max) @ Vge, Ic30 V
On-State Resistance (Max)24 mOhmsGate Charge (Qg) (Max) @ Vgs13.2nC @ 10V
Drain to Source Voltage (Vdss)30VInput Capacitance (Ciss) (Max) @ Vds697pF @ 15V
Current - Continuous Drain (Id) @ 25degC4.2A (Ta)

Mechanical

PackagingTape & Reel (TR)Mounting TypeSurface Mount
Mounting StyleSMD/SMTPackage / CaseTO-236-3, SC-59, SOT-23-3
Supplier Device PackageSC-59

Product Info

SeriesDMN3070TechnologySi
Channel TypeEnhancementManufacturerDiodes Incorporated
Configuration1 N-Channel

Environmental

Operating Temperature+ 150 C