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DMN1150UFB-7B

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DMN1150UFB-7B

Manufacturer
Description
MOSFET BVDSS: 8V~24V T&R 10K MOSF N CH 12V 1.41A X1DFN10063 MOSFET N-CH MOSFET 12V MOSFET N-CH 12V 1.41A 3DFN N-CHANNEL ENHANCEMENT MODE MOSFET
Category
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Business

MOQ10000Unit Pack10000
Other NamesDMN1150UFB-7BDITRStandard Package10,000
Factory Pack Quantity10000

Compliance

RoHSLead free / RoHS Compliant

Electrical

FET TypeMOSFET N-Channel, Metal OxideFall Time30 ns
Vgs (Max)1V @ 250µAFET FeatureLogic Level Gate
Gate Charge1.5 nCPower - Max500mW
Rise Time (Typ)34.5 nsTransistor TypeN-Channel
Delay to 1st Tap57 nsNumber of Channels1 Channel
Vgs(th) (Max) @ Id1V @ 250µARds On (Max) @ Id, Vgs150 mOhm @ 1A, 4.5V
Power - Average Forward500 mWVce(on) (Max) @ Vge, Ic12 V
On-State Resistance (Max)150 mOhmsGate Charge (Qg) (Max) @ Vgs1.5nC @ 4.5V
Drain to Source Voltage (Vdss)12VInput Capacitance (Ciss) (Max) @ Vds106pF @ 10V
Current - Continuous Drain (Id) @ 25degC1.41A (Ta)

Mechanical

PackagingTape & Reel (TR)Mounting TypeSurface Mount
Mounting StyleSMD/SMTPackage / Case3-UFDFN
Supplier Device Package3-DFN1006 (1.0x0.6)

Product Info

SeriesDMN1150TechnologySi
Channel TypeEnhancementManufacturerDiodes Incorporated
Configuration1 N-Channel

Environmental

Operating Temperature+ 150 C