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DMG4N65CTI
| Manufacturer | |
| Description | MOSFET BVDSS: 501V~650V TUBE 50PCS MOSF N CH 650V 4A ITO-220AB MOSFET N-CH MOSFET 650V 4A MOSFET N-CH 650V 4A ITO-220AB N-CHANNEL ENHANCEMENT MODE MOSFET |
| Category |
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Business
| MOQ | 50 | Unit Pack | 50 |
| Other Names | DMG4N65CTIDI | Standard Package | 50 |
| Factory Pack Quantity | 50 | ||
Compliance
| RoHS | Contains lead / RoHS Compliant | ||
Electrical
| FET Type | MOSFET N-Channel, Metal Oxide | Fall Time | 16 ns |
| Vgs (Max) | 5V @ 250µA | FET Feature | Standard |
| Gate Charge | 13.5 nC | Power - Max | 8.35W |
| Rise Time (Typ) | 13.8 ns | Transistor Type | N-Channel |
| Delay to 1st Tap | 40 ns | Number of Channels | 1 Channel |
| Vgs(th) (Max) @ Id | 5V @ 250µA | Rds On (Max) @ Id, Vgs | 3 Ohm @ 2A, 10V |
| Power - Average Forward | 8.35 W | Vce(on) (Max) @ Vge, Ic | 650 V |
| On-State Resistance (Max) | 2.1 Ohms | Gate Charge (Qg) (Max) @ Vgs | 13.5nC @ 10V |
| Drain to Source Voltage (Vdss) | 650V | Input Capacitance (Ciss) (Max) @ Vds | 900pF @ 25V |
| Current - Continuous Drain (Id) @ 25degC | 4A (Tc) | ||
Mechanical
| Packaging | Tube | Mounting Type | Through Hole |
| Mounting Style | Through Hole | Package / Case | TO-220-3 |
| Supplier Device Package | TO-220AB | ||
Product Info
| Series | DMG4N65 | Technology | Si |
| Channel Type | Enhancement | Manufacturer | Diodes Incorporated |
| Configuration | 1 N-Channel | ||
Environmental
| Operating Temperature | + 150 C | ||