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ZXMP3A13FTA

Manufacturer	Diodes Incorporated
Description	Trans MOSFET P-CH 30V 1.6A 3-Pin SOT-23 T/R MOSFET 30V P-Chnl UMOS P-CH MOS-FET 1,6A 30V SOT23 MOSFET P-CH 30V 1.4A SOT23-3 MOSFET, P, SOT-23
Category	Discrete Semiconductor ComponentsIGBTsDiscrete IGBTs

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FET Type	MOSFET P-Channel, Metal Oxide	Fall Time	3 ns
Vgs (Max)	±20 V	FET Feature	Logic Level Gate
Power - Max	625mW	Noise Figure	Not Required dB
Power - Rated	625 mW	Power - Output	Not Required dB
Fall Time (Typ)	7.6 ns	Frequency - Max	Not Required MHz
Rise Time (Typ)	3 ns	Transistor Type	P-Channel
Delay to 1st Tap	11.1 ns	Number of Elements	:1
Vgs(th) (Max) @ Id	1V @ 250µA	Voltage - Breakdown	30 V
Voltage - Threshold	:-1V	Current Rating (Max)	:-1.6A
Resistance - RDS(On)	:210mohm	Contact Voltage (Max)	:-30V
Rds On (Max) @ Id, Vgs	210@10V mOhm	Power Dissipation (Max)	:806mW
Propagation Delay (Max)	3 ns	Vce(on) (Max) @ Vge, Ic	- 30 V
Current Drain (Id) - Max	1.6 A	Power (Watts) - Per Port	0.625W
On-State Resistance (Max)	0.21 ohm	Voltage - Supply (Vcc/Vdd)	30V
Gate Charge (Qg) (Max) @ Vgs	6.4nC @ 10V	Current - Peak Pulse (8/20us)	:6A
Switch Time (Ton, Toff) (Max)	1.5 ns	Vce Saturation (Max) @ Ib, Ic	Not Required %
Drain to Source Voltage (Vdss)	30V	Current - Peak Pulse (10/1000us)	1.6 A
Voltage - Gate Trigger (Vgt) (Max)	+/- 20 V	Current - Drain (Idss) @ Vds (Vgs=0)	- 1.6 A
Input Capacitance (Ciss) (Max) @ Vds	206pF @ 15V	Current - Continuous Drain (Id) @ 25degC	1.4A (Ta)