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MMBT2222A-7-F

Manufacturer	Diodes Incorporated
Description	Trans GP BJT NPN 40V 0.6A 3-Pin SOT-23 T/R NPN-TRANSISTOR 40V 0,6A SOT-23 TRANS NPN 40V 350MW SMD SOT23-3 Transistors Bipolar - BJT 40V 300mW TRANSISTOR, NPN, SOT23 40V NPN SMALL SIGNAL TRANSISTOR IN SOT23 Transistor SOT-23 NPN 40 V 600 mA, MMBT2222A-7-F, Diodes Incorporated Bipolar Transistors - BJT 40V 300mW
Category	Discrete Semiconductor ComponentsBipolar TransistorsBipolar Transistors - General

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Icc Max	0.6A	Frequency	300 MHz
Power - Max	300mW	Power - Rated	0.3 W
Frequency - Max	300(Min) MHz	Transistor Type	NPN
Voltage - Supply	40V	Number of Elements	1
Vce Saturation (Max)	1 V	Voltage - Input (Min)	40 V
Frequency - Transition	300MHz	Gain Bandwidth Product	300 MHz
Voltage - Supply (Max)	6	Power Dissipation (Max)	300 mW
Vce(on) (Max) @ Vge, Ic	75 V	Power (Watts) - Per Port	0.2W
Vce Saturation (Max) @ Ib, Ic	1V @ 50mA, 500mA	Current - Collector (Ic) (Max)	600mA
Current - Collector Cutoff (Max)	0.6 A	DC Current Gain (hFE) (Min) @ Ic, Vce	35@0.1mA@10V\|50@1mA@10V\|75@10mA@10V\|100@150mA@10V\|40@500mA@10V\|35@150mA@1V
Voltage - Collector Emitter Breakdown (Max)	6 V

Cavity E

75V

Operating Temperature

-55 to 150 °C

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